AP88N30W N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP88N30W RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower On-resistance ▼ High Speed Switching G S D N-CHA.
AP88N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .

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Datasheet Specifications

Part number: AP88N30W
Manufacturer: Advanced Power Electronics
File Size: 101.58 KB
Datasheet: AP88N30W-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* with higher power level preclusion than TO-220 device. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 300 ±30 88 270 88

AP88N30W Distributors

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AP88N30W N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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