AP88L02S N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP88L02S/P N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching De.
G D S BVDSS RDS(ON) ID 25V 5mΩ 88A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi.

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Datasheet Specifications

Part number: AP88L02S
Manufacturer: Advanced Power Electronics
File Size: 79.66 KB
Datasheet: AP88L02S-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP88L02P) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current

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AP88L02S N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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