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AP6679P P-Channel MOSFET

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Description

AP6679S/P Advanced Power Electronics Corp.▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEM.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679P) are available for low-profile applications. G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C

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📌 All Tags

AP6679P P-Channel MOSFET Advanced Power Electronics
Advanced Power Electronics AP6679P-like datasheet
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