AP6679BGJB-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

AP6679BGJB-HF Description

Advanced Power Electronics Corp.AP6679BGJB-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive R.
AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

AP6679BGJB-HF Applications

* The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID -30V 9mΩ -63A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃

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Datasheet Details

Part number: AP6679BGJB-HF
Manufacturer: Advanced Power Electronics
File Size: 59.57 KB
Datasheet: AP6679BGJB-HF-AdvancedPowerElectronics.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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