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AP3310GJ-HF, AP3310GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP3310GJ-HF Description

AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability ▼ Fast Switching Charac.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

AP3310GJ-HF Applications

* G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.2 -24 25 0.01 -55 to 150

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AP3310GJ-HF, AP3310GH-HF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP3310GJ-HF, AP3310GH-HF
Manufacturer
Advanced Power Electronics
File Size
101.77 KB
Datasheet
AP3310GH-HF-AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP3310GJ-HF, AP3310GH-HF.
Please refer to the document for exact specifications by model.

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📌 All Tags

P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP3310GJ-HF-like datasheet