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AP3310GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP3310GJ, a member of the AP3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

This device is suited for low voltage and lower power applications.

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Full PDF Text Transcription

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AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability www.DataSheet4U.com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -20V 150mΩ -10A ▼ Fast Switching Characteristic G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 ± 12 -10 -6.2 -24 15.
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