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AP3000A-00
SILICON PIN DIODE CHIP
DESCRIPTION:
The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of Control Applications Such as RF Switching,Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming.
PACKAGE STYLE 01
MAXIMUM RATINGS
IF VR PDISS θJC 100 mA 300 V 250 mW @ TA = 25 C 20 C/W
O O
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CHARACTERISTICS
SYMBOL
VBR CJ RS TL Trr IR = 10 µA VR = 50 V VR = 40 V IF = 50 mA IF =10 mA IF =20 mA
TC = 25 C
O
TEST CONDITIONS
f = 1.0 MHz
MINIMUM
300
TYPICAL
MAXIMUM
0.2 0.6
UNITS
V pF Ohms nS nS
f = 100 MHz IR = 6.0 mA IR = 100 mA 1000 100
A D V A N C E D S E M I C O N D U C T O R, I N C.
AP3000A-00 Datasheet
