AP30P10GS P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP30P10GS RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G P.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP30P10GS
Manufacturer: Advanced Power Electronics
File Size: 89.91 KB
Datasheet: AP30P10GS-AdvancedPowerElectronics.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Dr

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AP30P10GS P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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