AP28G45GEO-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Description

Advanced Power Electronics Corp.▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications AP28G45GEO-HF RoH.

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Datasheet Specifications

Part number: AP28G45GEO-HF
Manufacturer: Advanced Power Electronics
File Size: 89.42 KB
Datasheet: AP28G45GEO-HF-AdvancedPowerElectronics.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* AP28G45GEO-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR E E E G TSSOP-8 C C C C VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGE ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5

AP28G45GEO-HF Distributors

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AP28G45GEO-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

Advanced Power Electronics AP28G45GEO-HF-like datasheet