Datasheet4U Logo Datasheet4U.com

AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP28G45EM Description

AP28G45EM Advanced Power Electronics Corp.N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.3V.

AP28G45EM Applications

* C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation Storage Temperature Range Op

📥 Download Datasheet

Preview of AP28G45EM PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
AP28G45EM
Manufacturer
Advanced Power Electronics
File Size
69.86 KB
Datasheet
AP28G45EM-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

📁 Related Datasheet

  • AP2805 - 500mA High-side Power Distribution Switch (BCD)
  • AP2810 - 1.0A High-side Power Distribution Switch (BCD)
  • AP2815 - 1.5A High-side Power Distribution Switch (BCD)
  • AP2820 - High-side Power Distribution Switch (BCD)
  • AP2821 - High-side Power Distribution Switch (BCD)
  • AP2822 - 0.5A to 2.0A High-side Power Distribution Switches (BCD)
  • AP2851GO - N- and P-Channel MOSFET (VBsemi)
  • AP28N50F - 500V N-Channel Enhancement Mode MOSFET (APM)

📌 All Tags

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics
Advanced Power Electronics AP28G45EM-like datasheet