AP28G40GEJ, AP28G40GEH Datasheet - Advanced Power Electronics

AP28G40GEJ N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @.

AP28G40GEH-AdvancedPowerElectronics.pdf

AP28G40GEJ Datasheet Preview — This datasheet PDF includes multiple part numbers: AP28G40GEJ, AP28G40GEH. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AP28G40GEJ, AP28G40GEH

Manufacturer:

Advanced Power Electronics

File Size:

135.90 KB

Description:

N-channel insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: AP28G40GEJ, AP28G40GEH.
Please refer to the document for exact specifications by model.

AP28G40GEJ Distributor

📁 Related Datasheet

AP28G40GEH N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)

AP28G40GEM-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)

AP28G40GEO N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)

AP28G45EM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)

AP28G45GEM N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)

AP28G45GEO-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)

AP2805 500mA High-side Power Distribution Switch (BCD)

AP2810 1.0A High-side Power Distribution Switch (BCD)

TAGS

AP28G40GEJ AP28G40GEH N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics