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IRFZ46 HEXFET Power MOSFET

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Description

IRFZ46 HEXFET ® Power MOSFET Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS=50V RD.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Datasheet Specifications

Part number
IRFZ46
Manufacturer
ART CHIP
File Size
620.19 KB
Datasheet
IRFZ46-ARTCHIP.pdf
Description
HEXFET Power MOSFET

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID@ Tc=25 ID@ Tc=100 IDM PD @ Tc=25 VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS@

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