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IRFZ46NPbF Power MOSFETs

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Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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Features

* Y LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEE K 19 LINE C Notes: 1. For an Automotive Qualified version of this part please seehttp://www. irf. com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www. irf. com/package/ Data and specifications subject to c

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC =

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