z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max. )@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ. )
IRF634A Advanced Power MOSFET
BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220
1. Gate 2. Drain 3.Source
Absolute Maximum Ratings
Symbol
Characteristic
VDSS ID
Drain-to-Source Voltage Continuous Drain Current (Tc=25 ) Continuous Drain Current (Tc=100 )
IDM VGS EAS IAR EAR dv/dt
Drain Current-Pulsed (1) Ga.
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IRF634 - N-CHANNEL Power MOSFET (STMicroelectronics)
