Datasheet Details
- Part number
- SSC8K23GN2
- Manufacturer
- AFSEMI
- File Size
- 237.66 KB
- Datasheet
- SSC8K23GN2-AFSEMI.pdf
- Description
- P-Channel Enhancement Mode MOSFET
SSC8K23GN2 Description
SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode * .
IO 1A
654
KG
S
SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high
KD
cell density and DMOS trench techno.
SSC8K23GN2 Features
* P-MOSFET VDS VGS
RDSon TYP 135mR@-4V5
ID
SSC8K23GN2 Applications
* Bidirectional blocking switch;
* DC-DC conversion applications;
* Li-battery charging;
-20V ±8V Schottky
180mR@-2V5 240mR@-1V8
-2A
* Pin configuration
Top View
VR IR
VF
20V 35uA 410mV@0.5A
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