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SSC8013GS6 P-Channel Enhancement Mode MOSFET

SSC8013GS6 Description

SSC8013GS6 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8013GS6 Features

* VDS VGS RDSon TYP 38mR@-4V5 ID

SSC8013GS6 Applications

* Load Switch
* Portable Devices
* DCDC conversion -12V ±8V 47mR@-2V5 -3.8A 61mR@-1V8
* Pin Configuration

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Datasheet Details

Part number
SSC8013GS6
Manufacturer
AFSEMI
File Size
196.55 KB
Datasheet
SSC8013GS6-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8013GS6-like datasheet