Datasheet Details
- Part number
- SSC8K21GN3
- Manufacturer
- AFSEMI
- File Size
- 537.99 KB
- Datasheet
- SSC8K21GN3-AFSEMI.pdf
- Description
- P-Channel Enhancement Mode MOSFET
SSC8K21GN3 Description
SSC8K21GN3 P-Channel Enhancement Mode MOSFET with Schottky Diode * .
SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward vo.
SSC8K21GN3 Features
* P-MOSFET VDS VGS
-20V ±8V
Schottky VR IR 20V 35uA
RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8
VF TYP 410Mv@0.5A
ID -2A
IO 1A
SSC8K21GN3 Applications
* Li Battery Charging
* High Side DC/DC Converter
* High Side Driver for Brushless DC Motor
* Power Management in Portable, Battery
Powered Devices
* Pin configuration
Top View
8765 KKDD
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