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PED3312M Datasheet, semi one

PED3312M mosfet equivalent, n-channel enhancement mode power mosfet.

PED3312M Avg. rating / M : 1.0 rating-14

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PED3312M Datasheet

Features and benefits


* VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Po.

Application

It is ESD protected. General Features
* VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V .

Description

The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features
* VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6.

Image gallery

PED3312M Page 1 PED3312M Page 2 PED3312M Page 3

TAGS

PED3312M
N-Channel
Enhancement
Mode
Power
MOSFET
semi one

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