PED3312M mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 18V, ID = 22 A
RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Po.
It is ESD protected.
General Features
* VDS = 18V, ID = 22 A
RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V .
The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
General Features
* VDS = 18V, ID = 22 A
RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6.
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