PED30P09M mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V, ID = -9A
RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V
Schematic diagram
* High Power and current handing capability
* Lead free produ.
PED30P09M
General Features
* VDS = -30V, ID = -9A
RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V
Schematic.
The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PED30P09M
General Features
* VDS = -30V, ID = -9A
RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-.
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