PED30H10G datasheet, mosfet equivalent, semi one

Features and benefits

* VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

Application

General Features
* VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
* High density cell design for ultra.

Description

The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
* High de.

Image gallery