PE8910 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V
ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product .
It is ESD protested.
General Features
* VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V
ESD R.
The PE8910 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
General Features
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