PE80H11 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stabi.
General Features
* VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
* High density cell design for ultra low Rdson
.
The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
* High density cell design.
Image gallery
TAGS
Download (Size : 823.08KB)