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PE8124HM1 - N-Channel Enhancement Mode Power MOSFET

Description

The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS > 12V, ID = 24A RDS(ON) < 3.9mΩ @ VGS=4.5V RDS(ON) < 4.2mΩ @ VGS=3.8V RDS(ON) < 4.6mΩ @ VGS=3.0V RDS(ON) < 5.4mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Datasheet Details

Part number PE8124HM1
Manufacturer ChipSourceTek
File Size 755.82 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8124HM1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8124HM1 N-Channel Enhancement Mode Power MOSFET Description The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDS > 12V, ID = 24A RDS(ON) < 3.9mΩ @ VGS=4.5V RDS(ON) < 4.2mΩ @ VGS=3.8V RDS(ON) < 4.6mΩ @ VGS=3.0V RDS(ON) < 5.4mΩ @ VGS=2.
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