PE60P50 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson <.
The PE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
* VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V
* High den.
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