PE6003 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surfac.
The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
.
Image gallery
TAGS
Download (Size : 726.87KB)