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PE4425 Datasheet, semi one

PE4425 mosfet equivalent, p-channel enhancement mode power mosfet.

PE4425 Avg. rating / M : 1.0 rating-11

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PE4425 Datasheet

Features and benefits


* VDS =-40V,ID =-15A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.

Application

General Features
* VDS =-40V,ID =-15A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.5V
* High density cell d.

Description

The PE4425 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-40V,ID =-15A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.5V <.

Image gallery

PE4425 Page 1 PE4425 Page 2 PE4425 Page 3

TAGS

PE4425
P-Channel
Enhancement
Mode
Power
MOSFET
semi one

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