Datasheet Details
| Part number | PE4435 |
|---|---|
| Manufacturer | semi one |
| File Size | 244.66 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PE4435 Datasheet
|
|
|
General Description
The PE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
Key Features
- VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package Marking and pin Assignment.