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PE4419 Datasheet Preview

PE4419 Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE4419 pdf
PE4419
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE4419 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
GENERAL FEATURES
VDS = -30V,ID = -11A
RDS(ON) < 30m@ VGS=-4.5V
RDS(ON) < 18m@ VGS=-10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D
G
S
Schematic diagram
PE4419
Application
Battery Switch
Load switch
Power management
Marking and pin Assignment
SOP-8 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25
Continuous Drain Current (TJ =150)
TC =70
TA =25
ID
TA =70
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
www.semi-one.com
Page 1
Limit
-30
±25
-11
-8.5
-9.1
-7.2
-44
3.1
-55 To 150
Unit
V
V
A
A
W
40 /W
2016 Nov. V1.1



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PE4419 Datasheet Preview

PE4419 Datasheet

P-Channel Enhancement Mode Power MOSFET

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PE4419 pdf
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Condition
VGS=0V ID=-250μA
VDS=-30V,VGS=0V
VGS=±25V,VDS=0V
VDS=VGS,ID=-250μ A
VGS=-10V, ID=-11A
VGS=-4.5V, ID=-6.0A
VDS=-15V,ID=-9.1A
VDS=-15V,VGS=0V,
F=1.0MHz
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6
VDS=-15V,ID=-9.1A
VGS=-10V
VGS=0V,IS=-2.1A
PE4419
Min Typ Max Unit
-30 -33
-
--
-1
- - ±100
V
μA
nA
-1.5 -2
- 14
- 22
10 -
-2.5
18
30
-
V
m
m
S
- 1000
- 210
- 150
-
-
-
PF
PF
PF
-8
- 12
- 32
16
- 21
- 2.6
- 6.2
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
www.semi-one.com
Page 2
2016 Nov. V1.1


Part Number PE4419
Description P-Channel Enhancement Mode Power MOSFET
Maker Semione
Total Page 6 Pages
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PE4419 pdf
PE4419 Datasheet PDF
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