PE30P80K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V
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S Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche volta.
General Features
* VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V
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S Schematic diagram
* High density cell .
The PE30P80K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V
D G
S Schematic diagram.
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