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PE30P11DS - P-Channel Enhancement Mode Power MOSFET

Description

The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -30V, ID = -10A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE30P11DS
Manufacturer ChipSourceTek
File Size 1.00 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE30P11DS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE30P11DS General Features ● VDS = -30V, ID = -10A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.
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