PE3080K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage an.
GENERAL FEATURES
* VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell desi.
The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
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