PE3010 datasheet, mosfet equivalent, semi one

Features and benefits

* VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized .

Application

General Features
* VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V Schematic diagram
* Hi.

Description

The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V Sch.

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