PE3050K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized A.
General Features
* VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V
Schematic diagram
* Hig.
The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V
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