PE2308A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID = 6A RDS(ON) =16m Ω @ VGS=4.5V RDS(ON) =21m Ω @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
* Surf.
The PE2308A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
Image gallery
TAGS
Download (Size : 775.35KB)