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PE2302 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 3A RDS(ON) < 90mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 3D G1 2S Marking and pin Assignment.

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Datasheet Details

Part number PE2302
Manufacturer semi one
File Size 196.71 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2302 Datasheet

Full PDF Text Transcription (Reference)

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PE2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 3A RDS(ON) < 90mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.