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PE15N10 Datasheet Preview

PE15N10 Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE15N10
N-Channel Enhancement Mode Power MOSFET
Description
The PE15N10 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =100V,ID =15A
RDS(ON) < 100m@ VGS=10V (Typ:85m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-2L top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
15
9
65
30
0.24
150
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
WWW.SEMI-ONE.COM
Page 1




semi one

PE15N10 Datasheet Preview

PE15N10 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE15N10
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
4.17 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
100 110
--
-
1
V
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=12A
1.2 1.9
- 85
2.5
100
V
m
Forward Transconductance
gFS
VDS=25V,ID=6A
3.5 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
- 850
-
PF
VDS=25V,VGS=0V,
Coss
- 160
-
PF
F=1.0MHz
Crss
- 110
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 11
- 7.4
- 35
-
-
-
nS
nS
nS
Turn-Off Fall Time
tf
- 9.1
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
- 15.5
nC
VDS=30V,ID=3A,
Qgs
- 3.2
-
nC
VGS=10V
Qgd
- 4.7
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=10A
- - 1.2
V
Diode Forward Current (Note 2)
IS
- - 12
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF =6A
- 21
Qrr
di/dt = 100A/μs(Note3)
- 97
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
WWW.SEMI-ONE.COM
Page 2


Part Number PE15N10
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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