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PE1505 Datasheet Preview

PE1505 Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE1505
N-Channel Enhancement Mode Power MOSFET
Description
The PE1505 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =150V,ID =5.2A
RDS(ON) < 44m@ VGS=10V
Typ31m
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
SOP-8 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
150
±20
5.2
3.7
42
3.5
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
35.7 /W
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semi one

PE1505 Datasheet Preview

PE1505 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE1505
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=150V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.2A
Forward Transconductance
gFS VDS=50V,ID=5.2A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=75V,ID=3.1A
VGS=10V,RGEN=6.5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=75V,ID=3.1A,
Qgs
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=3.1A
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 3.1A,
Qrr VDD = 25V,di/dt = 100A/μs
Min Typ
150 170
--
--
2.5 3.2
- 31
12 -
- 1700
- 190
- 90
- 15
- 13
- 26
- 14
- 35.8
- 7.5
- 13
--
--
- 50
- 140
Max
-
1
±100
4.5
44
-
-
-
-
-
-
-
-
-
-
-
1.2
2.7
-
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production.
WWW.SEMI-ONE.COM
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Part Number PE1505
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
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PE1505 Datasheet PDF






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