PE1505 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE1505 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

semi one

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Datasheet Details

Part number	PE1505
Manufacturer	semi one
File Size	300.06 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE1505 Datasheet
Additional preview pages of the PE1505 datasheet.

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PE1505 N-Channel Enhancement Mode Power MOSFET Description The PE1505 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =5.

Published: Dec 3, 2018 |