PE1520 datasheet, mosfet equivalent, semi one

Features and benefits

* VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.

Application

General Features
* VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ)
* High density cell design for ultr.

Description

The PE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ)
* High dens.

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