PE1520
PE1520 is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
Description
The PE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V
(Typ:70mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Boost converters
- LED backlighting
- Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-220-3L top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
ID (100℃)
Drain Current-Continuous(TC=100℃)
IDM Pulsed Drain Current PD Maximum Power Dissipation
Derating factor
EAS Single pulse avalanche...