PSMN3R5-30YL datasheet, mosfet equivalent, nexperia

Features and benefits

* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources 3. Applications
* Class-D amplifiers
* DC-to-D.

Application

2. Features and benefits
* High efficiency due to low switching and conduction losses
* Suitable for logic lev.

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits
* High e.

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