PSMN3R5-80YSF - N-channel MOSFET

Description

NextPower 80 V, standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial and consumer applications.

Features

Low Qrr for higher efficiency and lower spiking.
150 A ID(max).
demonstrated continuous current rating.
Low QG × RDSon FOM for high efficiency switching.

nexperia

📥 Download Datasheet

Datasheet Details

Part number	PSMN3R5-80YSF
Manufacturer	nexperia
File Size	308.05 KB
Description	N-channel MOSFET
Datasheet	PSMN3R5-80YSF Datasheet

📁 Similar Datasheet

PSMN3R5-80ES - N-channel MOSFET (NXP Semiconductors)
PSMN3R5-80PS - MOSFET (NXP Semiconductors)
PSMN3R5-30LL - N-channel MOSFET (NXP Semiconductors)
PSMN3R5-30YL - N-channel FET (NXP Semiconductors)
PSMN3R0-30MLC - MOSFET (NXP Semiconductors)
PSMN3R0-30YL - MOSFET (NXP Semiconductors)
PSMN3R0-30YLD - N-channel MOSFET (NXP Semiconductors)
PSMN3R0-60BS - MOSFET (NXP Semiconductors)
PSMN3R0-60ES - MOSFET (NXP Semiconductors)
PSMN3R0-60PS - N-channel MOSFET (NXP Semiconductors)

Other Datasheets by nexperia

PSMN3R5-80PS - N-channel MOSFET
PSMN3R5-25MLD - N-channel MOSFET
PSMN3R5-30YL - N-channel MOSFET
PSMN3R5-40YSD - N-channel MOSFET
PSMN3R0-30MLC - N-channel MOSFET
PSMN3R0-30YL - N-channel MOSFET
PSMN3R0-30YLD - N-channel MOSFET
PSMN3R0-60BS - N-channel MOSFET

Full PDF Text Transcription

Click to expand full text

PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package 3 September 2021 Product data sheet 1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 150 A ID(max) – demonstrated continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56E package 3.

Published: Mar 1, 2023 |