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PSMN3R5-40YSD - N-channel MOSFET

Description

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Features

  • 120 A capability.
  • Avalanche rated, 100% tested at I(AS) = 120 A.
  • NextPower-S3 technology delivers 'superfast switching with soft recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Low VSD Schottky-like body-diode.
  • Tighter VGS(th) limits for improved paralleling.
  • Wide Safe Operating Area (SOA) for reliable lin.

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Full PDF Text Transcription

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PSMN3R5-40YSD N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product data sheet 1. General description 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2.
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