Datasheet Details
| Part number | PSMN3R5-40YSD |
|---|---|
| Manufacturer | Nexperia |
| File Size | 283.87 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN3R5-40YSD Datasheet
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General Description
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Key Features
- 120 A capability.
- Avalanche rated, 100% tested at I(AS) = 120 A.
- NextPower-S3 technology delivers 'superfast switching with soft recovery'.
- Low QRR, QG and QGD for high system efficiency and low EMI designs.
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
- Low VSD Schottky-like body-diode.
- Tighter VGS(th) limits for improved paralleling.
- Wide Safe Operating Area (SOA) for reliable lin.