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PMZB950UPEL - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low leakage current.
  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Drain-source on-state resistance RDSon = 1.02 Ω 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMZB950UPEL 20 V, P-channel Trench MOSFET 5 December 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low leakage current • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.