PMZB950UPE datasheet, mosfet equivalent, nexperia

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Features and benefits

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HB.

Application

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Leadle.

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