PMZB600UNEL mosfet equivalent, n-channel mosfet.
* Low leakage current
* Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
* Drain-source.
* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits
4. Quick reference .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Low leakage current
* Leadless ul.
Image gallery
TAGS