PMZB600UNE datasheet, mosfet equivalent, nexperia

Features and benefits

* Trench MOSFET technology
* Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
* Drain-s.

Application

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference .

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Leadle.

Image gallery