PMXB65UPE datasheet, mosfet equivalent, nexperia

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Features and benefits

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction.

Application

VGS(th) = -0.68 V 3. Applications
* High-side load switch and charging switch for portable devices
* Power mana.

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Leadle.

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