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PMPB30XPE - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Extended temperature range Tj = 175 °C.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Tin-plated 100 % solderable side pads for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Trench MOSFET technology 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMPB30XPE 20 V, P-channel Trench MOSFET 26 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Trench MOSFET technology 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.