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PMPB33XN - MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Trench MOSFET technology.
  • Very fast switching.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100 % solderable side pads for optical solder inspection 1.3.

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Datasheet preview – PMPB33XN

Datasheet Details

Part number PMPB33XN
Manufacturer NXP Semiconductors
File Size 226.84 KB
Description MOSFET
Datasheet download datasheet PMPB33XN Datasheet
Additional preview pages of the PMPB33XN datasheet.

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Full PDF Text Transcription

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PMPB33XN 6 July 2012 30 V single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Trench MOSFET technology • Very fast switching • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 1.4 Quick reference data Table 1.
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