PBSS4160QA datasheet, transistor equivalent, nexperia

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Features and benefits

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* High .

Application

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g. .

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits

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